1000 W QCW OUTPUT POWER FROM SURFACE-EMITTING GAAS/ALGAAS LASER-DIODE ARRAYS

被引：3

作者：

GROUSSIN, B ^{[1
]}

PITARD, F ^{[1
]}

PARENT, A ^{[1
]}

CARRIERE, C ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,EM2,F-34095 MONTPELLIER 2,FRANCE

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 04期

关键词：

SEMICONDUCTOR LASERS; LASERS AND LASER APPLICATIONS;

D O I：

10.1049/el:19930249

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, quasicontinuous-wave (QCW) output power levels of 1000 W from monolithic surface emitting laser diodes (M-SELDs) are reported to realise the basic structure of the laser diodes, an origin 2-D structure was developed where the epitaxial structure is made on engraved GaAs substrate and the laser facets are made by a microcleaving technique. With a compact planar association of 10 M-SELDs of 0.1 cm2 WhiCh emits 100 W QCW each (optical power density = 1 kW/cm2) on the same submount, a power source of 1000 W QCW has been obtained. The operating current is 150 A, the slope efficiency is 7.5 W/A and the optical divergence of the beam is lower than 20-degrees FWHM in the perpendicular direction.

引用

页码：370 / 372

页数：3

共 4 条

[1] MONOLITHIC 2-DIMENSIONAL GAAS ALGAAS LASER ARRAYS FABRICATED BY CHLORINE ION-BEAM-ASSISTED MICROMACHINING [J].