HIGH-POWER CW OPERATION OF GAAS/GAALAS SURFACE-EMITTING LASERS MOUNTED IN THE JUNCTION-UP CONFIGURATION

被引：20

作者：

OU, SS

JANSEN, M

YANG, JJ

SERGANT, M

机构：

[1] TRW, Research Center, Space and Technology Group, Redondo Beach

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 09期

关键词：

D O I：

10.1063/1.106337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface-emitting lasers with all dry etched micromirrors in the junction-up configuration has been demonstrated for the first time. The 45-degrees and 90-degrees mirrors of the devices were fabricated by ion beam etching and reactive ion etching techniques, respectively. Typical threshold current densities of less than 360 A/cm2, external differential efficiencies of 22% (0.34 W/A) from the emitting facet, and output powers in excess of 280 mW were achieved under cw operation.

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页码：1037 / 1039

页数：3

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