HIGH-PERFORMANCE SURFACE-EMITTING LASERS WITH 45-DEGREES INTRACAVITY MICROMIRRORS

For the first time, high performance GaAs/GaAlAs surface-emitting lasers with internal 45-degrees micromirrors, which totally reflect and emit the beam from the substrate in junction-down configuration, have been demonstrated. The 45-degrees and 90-degrees mirrors of the device were fabricated by using ion milling and reactive ion etching techniques, respectively. Typical threshold current density of 440 A/cm2, external differential efficiencies of 52%, and output power in excess of 1 W under quasi-cw operation have been achieved.