5-W GAAS/GAALAS LASER-DIODES WITH A REACTIVE ION ETCHED FACET

被引:19
作者
OU, SS
YANG, JJ
JANSEN, M
机构
[1] TRW, Research Center, Space and Technology Group, Redondo Beach, CA 90278, One Space Park
关键词
D O I
10.1063/1.104039
中图分类号
O59 [应用物理学];
学科分类号
摘要
GaAs/GaAlAs laser diodes with reactive ion etched facets have been demonstrated for the first time with high output powers (5 W from 100-μm-wide apertures), high output power density (15 MW/cm2), and high slope efficiencies (66%) in junction-up configuration under quasi-cw operation. Mirror etching was performed in a pure SiCl4 gas environment by maintaining a low background pressure and gas pressure. High quality etched facets have been achieved with almost no scattering loss.
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页码:1861 / 1863
页数:3
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