CHARACTERIZATION OF DOUBLE QUANTUM WELL GAAS/ALGAAS DIODE-LASERS

被引：7

作者：

OU, SS

YANG, JJ

WILCOX, JZ

JANSEN, M

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 15期

关键词：

D O I：

10.1049/el:19880648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：952 / 953

页数：2

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[1] HIGH-BRIGHTNESS, HIGH-EFFICIENCY, SINGLE-QUANTUM-WELL LASER DIODE-ARRAY
WELCH, DF
CARDINAL, M
STREIFER, W
SCIFRES, DR
CROSS, PS
[J]. ELECTRONICS LETTERS, 1987, 23 (23) : 1240 - 1241
[2] ANOMALOUS LENGTH DEPENDENCE OF THRESHOLD FOR THIN QUANTUM-WELL ALGAAS DIODE-LASERS
ZORY, PS
REISINGER, AR
MAWST, LJ
COSTRINI, G
ZMUDZINSKI, CA
EMANUEL, MA
GIVENS, ME
COLEMAN, JJ
[J]. ELECTRONICS LETTERS, 1986, 22 (09) : 475 - 477
[3] ANOMALOUS TEMPERATURE-DEPENDENCE OF THRESHOLD FOR THIN QUANTUM-WELL ALGAAS DIODE-LASERS
ZORY, PS
REISINGER, AR
WATERS, RG
MAWST, LJ
ZMUDZINSKI, CA
EMANUEL, MA
GIVENS, ME
COLEMAN, JJ
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (01) : 16 - 18