ANOMALOUS TEMPERATURE-DEPENDENCE OF THRESHOLD FOR THIN QUANTUM-WELL ALGAAS DIODE-LASERS

被引：55

作者：

ZORY, PS ^{[1
]}

REISINGER, AR ^{[1
]}

WATERS, RG ^{[1
]}

MAWST, LJ ^{[1
]}

ZMUDZINSKI, CA ^{[1
]}

EMANUEL, MA ^{[1
]}

GIVENS, ME ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,COMPOUND SEMICOND MICROELECTR LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 01期

关键词：

D O I：

10.1063/1.97086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：16 / 18

页数：3

相关论文

共 16 条

[1] METALORGANIC CHEMICAL VAPOR-DEPOSITION
DAPKUS, PD
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1982, 12 : 243 - 269
[2] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[3] A CRITICAL-REVIEW OF HETEROJUNCTION BAND OFFSETS
DUGGAN, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1224 - 1230
[4] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS
DUTTA, NK
[J]. ELECTRONICS LETTERS, 1982, 18 (11) : 451 - 453
[5] CALCULATED THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS
DUTTA, NK
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7211 - 7214
[6] GOBEL EO, 1985, APPL PHYS LETT, V47, P781, DOI 10.1063/1.96036
[7] SOME CHARACTERISTICS OF THE GAAS GAALAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE QUANTUM WELL LASER STRUCTURE
HERSEE, SD
DECREMOUX, B
DUCHEMIN, JP
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 476 - 478
[8] GRADED BARRIER SINGLE QUANTUM WELL LASERS - THEORY AND EXPERIMENT
KASEMSET, D
HONG, CS
PATEL, NB
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 1025 - 1030
[9] MAWST LJ, UNPUB
[10] MEASUREMENT OF RADIATIVE AND NONRADIATIVE RECOMBINATION RATES IN INGAASP AND ALGAAS LIGHT-SOURCES
OLSHANSKY, R
SU, CB
MANNING, J
POWAZINIK, W
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (08) : 838 - 854