GRADED BARRIER SINGLE QUANTUM WELL LASERS - THEORY AND EXPERIMENT

被引：56

作者：

KASEMSET, D ^{[1
]}

HONG, CS ^{[1
]}

PATEL, NB ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] UNIV ESTADUAL CAMPINAS,BR-13100 CAMPINAS,SP,BRAZIL

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 06期

关键词：

D O I：

10.1109/JQE.1983.1071974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1025 / 1030

页数：6

共 12 条

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[2]

CASEY HC, 1978, HETEROSTRUCTURE LASE, P57

[3] QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

KOLBAS, RM ;

HOLONYAK, N .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :756-761

[4]

DUPUIS RD, 1978, I PHYS C SER, V45, P1

[5] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR A QUANTUM-WELL HETEROSTRUCTURE LASER [J].

HESS, K ;

VOJAK, BA ;

HOLONYAK, N ;

CHIN, R .

SOLID-STATE ELECTRONICS, 1980, 23 (06) :585-589

[6] STIMULATED-EMISSION IN A DEGENERATELY DOPED GAAS QUANTUM WELL [J].

HOLONYAK, N ;

VOJAK, BA ;

MORKOC, H ;

DRUMMOND, TJ ;

HESS, K .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :658-660

[7]

KASEMSET D, 1982, I PHYS C SER, V65, P79

[8] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].

LASHER, G ;

STERN, F .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&

[9] INTERFACIAL RECOMBINATION VELOCITY IN GAALAS-GAAS HETEROSTRUCTURES [J].

NELSON, RJ ;

SOBERS, RG .

APPLIED PHYSICS LETTERS, 1978, 32 (11) :761-763

[10] CARRIER COLLECTION IN A SEMICONDUCTOR QUANTUM WELL [J].

SHICHIJO, H ;

KOLBAS, RM ;

HOLONYAK, N ;

DUPUIS, RD ;

DAPKUS, PD .

SOLID STATE COMMUNICATIONS, 1978, 27 (10) :1029-1032

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