MEASUREMENT OF RADIATIVE AND NONRADIATIVE RECOMBINATION RATES IN INGAASP AND ALGAAS LIGHT-SOURCES

被引：218

作者：

OLSHANSKY, R

SU, CB

MANNING, J

POWAZINIK, W

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1984年 / 20卷 / 08期

关键词：

D O I：

10.1109/JQE.1984.1072500

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：838 / 854

页数：17

相关论文

共 31 条

[1] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION
ADAMS, AR
ASADA, M
SUEMATSU, Y
ARAI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L621 - L624
[2] OSCILLATORY MAGNETO-TRANSMISSION OF IN1-XGAXASYP1-Y ALLOYS
ALAVI, K
AGGARWAL, RL
GROVES, SH
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1979, 11 (1-3) : 136 - 138
[3] AMBIPOLAR TRANSPORT IN DOUBLE HETEROSTRUCTURE INJECTION-LASERS
ANTHONY, PJ
SCHUMAKER, NE
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (04): : 58 - 60
[4] TEMPERATURE-DEPENDENCE OF THE LASING THRESHOLD CURRENT OF DOUBLE HETEROSTRUCTURE INJECTION-LASERS DUE TO DRIFT CURRENT LOSS
ANTHONY, PJ
SCHUMAKER, NE
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 5038 - 5040
[5] AUGER EFFECT IN SEMICONDUCTORS
BEATTIE, AR
LANDSBERG, PT
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29
[6] AUGER RECOMBINATION RATE IN INGAASP LASERS
BURT, MG
[J]. ELECTRONICS LETTERS, 1982, 18 (19) : 806 - 807
[7] DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[8] THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y
DUTTA, NK
NELSON, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 74 - 92
[9] CALCULATED TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT OF GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS
DUTTA, NK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 70 - 73
[10] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERS
ETTENBERG, M
NUESE, CJ
KRESSEL, H
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2949 - 2950

← 1 2 3 4 →