AUGER RECOMBINATION RATE IN INGAASP LASERS

被引：11

作者：

BURT, MG

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 19期

关键词：

D O I：

10.1049/el:19820548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：806 / 807

页数：2

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[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS
ANDERSON, CL
CROWELL, CR
[J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &
[2] AUGER EFFECT IN SEMICONDUCTORS
BEATTIE, AR
LANDSBERG, PT
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29
[3] INTERBAND AUGER RECOMBINATION IN INGAASP
CHIU, LC
CHEN, PC
YARIV, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) : 938 - 941
[4] THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y
DUTTA, NK
NELSON, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 74 - 92
[5] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
HORIKOSHI, Y
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) : 809 - 815
[6] BAND STRUCTURE OF INDIUM ANTIMONIDE
KANE, EO
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261
[7] POLLAK FH, 1966, J PHYS SOC JPN, VS 21, P20
[8] MEASUREMENT OF RADIATIVE AND AUGER RECOMBINATION RATES IN P-TYPE INGAASP DIODE-LASERS
SU, CB
SCHLAFER, J
MANNING, J
OLSHANSKY, R
[J]. ELECTRONICS LETTERS, 1982, 18 (14) : 595 - 596
[9] BAND-TO-BAND AUGER RECOMBINATION IN INGAASP LASERS
SUGIMURA, A
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 21 - 23
[10] DISORDER-ENHANCED AUGER RECOMBINATION IN III-V ALLOYS
TAKESHIMA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 6118 - 6124