DISORDER-ENHANCED AUGER RECOMBINATION IN III-V ALLOYS

被引:33
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TAKESHIMA, M
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10.1063/1.324533
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O59 [应用物理学];
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页码:6118 / 6124
页数:7
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  • [1] [Anonymous], 1966, SEMICONDUCTORS SEMIM
  • [2] OVERLAP INTEGRALS FOR BLOCH ELECTRONS
    ANTONCIK, E
    LANDSBERG, PT
    [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527): : 337 - &
  • [3] AUGER-LIMITED CARRIER LIFETIMES IN HGCDTE AT HIGH EXCESS CARRIER CONCENTRATIONS
    BARTOLI, F
    ALLEN, R
    ESTEROWI.L
    KRUER, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) : 2150 - 2154
  • [4] BEATIE AR, 1967, PHYS STATUS, P577
  • [5] AUGER EFFECT IN SEMICONDUCTORS
    BEATTIE, AR
    LANDSBERG, PT
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29
  • [6] AUGER-RECOMBINATION IN SI
    BECK, JD
    CONRADT, R
    [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (01) : 93 - 95
  • [7] AUGER RECOMBINATION IN GAAS AN GASB
    BENZ, G
    CONRADT, R
    [J]. PHYSICAL REVIEW B, 1977, 16 (02): : 843 - 855
  • [8] EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS
    BEROLO, O
    WOOLLEY, JC
    VANVECHT.JA
    [J]. PHYSICAL REVIEW B, 1973, 8 (08): : 3794 - 3798
  • [9] SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS
    CHADI, DJ
    [J]. PHYSICAL REVIEW B, 1977, 16 (02): : 790 - 796
  • [10] CARRIER LIFETIMES IN EPITAXIAL INAS
    DALAL, VL
    HICINBOTHEM, WA
    KRESSEL, H
    [J]. APPLIED PHYSICS LETTERS, 1974, 24 (04) : 184 - 185