BAND-TO-BAND AUGER RECOMBINATION IN INGAASP LASERS

被引：45

作者：

SUGIMURA, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 01期

关键词：

D O I：

10.1063/1.92549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：21 / 23

页数：3

共 30 条

[1] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].

ADAMS, AR ;

ASADA, M ;

SUEMATSU, Y ;

ARAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624

[2]

[Anonymous], 1966, SEMICONDUCTORS SEMIM

[3] TEMPERATURE-DEPENDENCE OF THE LASING THRESHOLD CURRENT OF DOUBLE HETEROSTRUCTURE INJECTION-LASERS DUE TO DRIFT CURRENT LOSS [J].

ANTHONY, PJ ;

SCHUMAKER, NE .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :5038-5040

[4] 1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].

ARAI, S ;

SUEMATSU, Y ;

ITAYA, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :197-205

[5] AUGER EFFECT IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29

[6] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J].

BEATTIE, AR ;

SMITH, G .

PHYSICA STATUS SOLIDI, 1967, 19 (02) :577-&

[7]

BEROLO O, 1972, 11TH P INT C PHYS SE, P1420

[8]

DUTTA NK, 1980, ELECTRON LETT, V16, P654

[9] PHONON-ASSISTED AUGER RECOMBINATION IN DEGENERATE SEMICONDUCTORS [J].

HAUG, A .

SOLID STATE COMMUNICATIONS, 1977, 22 (08) :537-539

[10] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J].

HAYASHI, I ;

PANISH, MB ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :1929-&

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