ORIENTATION DEPENDENT REACTIVE ION ETCHING OF GAAS IN SICL4

被引：17

作者：

LI, JZ ^{[1
]}

ADESIDA, I ^{[1
]}

WOLF, ED ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 08期

关键词：

D O I：

10.1063/1.95406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：897 / 899

页数：3

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