PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTORS

被引：28

作者：

DONNELLY, VM

FLAMM, DL

IBBOTSON, DE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.572194

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：626 / 628

页数：3

共 24 条

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[7] COLDREN LA, UNPUB IEEE J QUANTUM
[8] DASARO LA, 1980, INT S GALLIUM ARSENI
[9] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2533 - 2537
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