HYDROGEN PLASMA-ETCHING OF GAAS OXIDE

[1] EXCITATION AND DISSOCIATION OF HYDROGEN BY AN ELECTRON SWARM [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1958, 245 (1242): : 335 - 351

[2] DESAINTFUSCIEN PM, 1967, REV PHYS APPL, V2, P235

[3] DISSOCIATION AND IONIZATION OF HYDROGEN IN HIGH FREQUENCY DISCHARGES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (510): : 732 - &

[4] KHASE SP, 1966, P PHYS SOC, V88, P605

[5] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 12 - 16

[1] EXCITATION AND DISSOCIATION OF HYDROGEN BY AN ELECTRON SWARM [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1958, 245 (1242): : 335 - 351

[2] DESAINTFUSCIEN PM, 1967, REV PHYS APPL, V2, P235

[3] DISSOCIATION AND IONIZATION OF HYDROGEN IN HIGH FREQUENCY DISCHARGES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (510): : 732 - &

[4] KHASE SP, 1966, P PHYS SOC, V88, P605

[5] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 12 - 16