HIGH-POWER ETCHED-FACET LASERS

[1] INGAASP-INP PLANAR-STRIPE LASERS FABRICATED BY WET CHEMICAL ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3176 - 3178

[2] LOW THRESHOLD GAAS/GAALAS BH LASERS WITH ION-BEAM-ETCHED MIRRORS [J]. ELECTRONICS LETTERS, 1985, 21 (13) : 566 - 568

[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 681 - 683

[4] FOCUSED-ION-BEAM MICROMACHINED ALGAAS SEMICONDUCTOR-LASER MIRRORS [J]. ELECTRONICS LETTERS, 1986, 22 (13) : 700 - 702

[5] ALGAAS/GAAS BURIED MULTIQUANTUM WELL LASERS WITH A REACTIVE ION ETCHED WINDOW FACET [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L463 - L465

[6] TIHANYI P, 1987, TOPICAL M SEMICONDUC, P95

[7] TIHANYI P, 1986, Patent No. 4623086

[8] TIHANYI P, 1987, SPIE S ADV SEMICONDU

[9] TIHANYI P, IN PRESS APPL PHYS L

[10] DRY-ETCHED-CAVITY PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (12) : 748 - 750

[1] INGAASP-INP PLANAR-STRIPE LASERS FABRICATED BY WET CHEMICAL ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3176 - 3178

[2] LOW THRESHOLD GAAS/GAALAS BH LASERS WITH ION-BEAM-ETCHED MIRRORS [J]. ELECTRONICS LETTERS, 1985, 21 (13) : 566 - 568

[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 681 - 683

[4] FOCUSED-ION-BEAM MICROMACHINED ALGAAS SEMICONDUCTOR-LASER MIRRORS [J]. ELECTRONICS LETTERS, 1986, 22 (13) : 700 - 702

[5] ALGAAS/GAAS BURIED MULTIQUANTUM WELL LASERS WITH A REACTIVE ION ETCHED WINDOW FACET [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L463 - L465

[6] TIHANYI P, 1987, TOPICAL M SEMICONDUC, P95

[7] TIHANYI P, 1986, Patent No. 4623086

[8] TIHANYI P, 1987, SPIE S ADV SEMICONDU

[9] TIHANYI P, IN PRESS APPL PHYS L

[10] DRY-ETCHED-CAVITY PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (12) : 748 - 750