LOW THRESHOLD GAAS/GAALAS BH LASERS WITH ION-BEAM-ETCHED MIRRORS

[1] SHORT-CAVITY GAALAS LASER BY WET CHEMICAL ETCHING [J]. ELECTRONICS LETTERS, 1982, 18 (20) : 879 - 880

[2] BOUADMA N, 1984, 9TH P IEEE INT C SEM, P180

[3] LOW THRESHOLD AND LOW DISPERSION MOCVD LPE BURIED-HETEROSTRUCTURE GAAS/GAALAS LASERS [J]. ELECTRONICS LETTERS, 1984, 20 (21) : 857 - 859

[4] EMBEDDED-STRIPE GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS WITH POLYCRYSTALLINE GAASP LAYERS .2. LASERS WITH ETCHED MIRRORS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 628 - 631

[5] GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3503 - 3509

[6] WADA M, 1984, 9TH IEEE INT SEM LAS, P182

[7] 8405223

[1] SHORT-CAVITY GAALAS LASER BY WET CHEMICAL ETCHING [J]. ELECTRONICS LETTERS, 1982, 18 (20) : 879 - 880

[2] BOUADMA N, 1984, 9TH P IEEE INT C SEM, P180

[3] LOW THRESHOLD AND LOW DISPERSION MOCVD LPE BURIED-HETEROSTRUCTURE GAAS/GAALAS LASERS [J]. ELECTRONICS LETTERS, 1984, 20 (21) : 857 - 859

[4] EMBEDDED-STRIPE GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS WITH POLYCRYSTALLINE GAASP LAYERS .2. LASERS WITH ETCHED MIRRORS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 628 - 631

[5] GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3503 - 3509

[6] WADA M, 1984, 9TH IEEE INT SEM LAS, P182

[7] 8405223