SHORT-CAVITY GAALAS LASER BY WET CHEMICAL ETCHING

被引：27

作者：

BOUADMA, N

RIOU, J

BOULEY, JC

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 20期

关键词：

D O I：

10.1049/el:19820596

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：879 / 880

页数：2

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[1] MONOLITHIC GAAS INJECTION MESA LASERS WITH GROWN OPTICAL FACETS
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[2] SHORT-CAVITY SINGLE-MODE 1.3 MU-INGAASP LASERS WITH EVAPORATED HIGH-REFLECTIVITY MIRRORS
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[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET
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[4] SHORT-CAVITY INGAASP INJECTION-LASERS - DEPENDENCE OF MODE SPECTRA AND SINGLE-LONGITUDINAL-MODE POWER ON CAVITY LENGTH
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (07) : 1101 - 1113
[5] GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING
MERZ, JL
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SERGENT, AM
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) : 72 - 82
[6] GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING
MERZ, JL
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3503 - 3509
[7] SURFACE-EMITTING GAINASP INP INJECTION-LASER WITH SHORT CAVITY LENGTH
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IGA, K
[J]. ELECTRONICS LETTERS, 1982, 18 (11) : 461 - 463
[8] ALGAAS/GAAS MICROCLEAVED FACET (MCF) LASER MONOLITHICALLY INTEGRATED WITH PHOTO-DIODE
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SAKURAI, T
[J]. ELECTRONICS LETTERS, 1982, 18 (05) : 189 - 190