INGAASP-INP PLANAR-STRIPE LASERS FABRICATED BY WET CHEMICAL ETCHING

被引：9

作者：

ADACHI, S

KAWAGUCHI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 05期

关键词：

D O I：

10.1063/1.329183

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：3176 / 3178

页数：3

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[2] IGA K, 1980, ELECTRON LETT, V16, P830
[3] GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING
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[5] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M
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[6] INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION
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[7] LOW-TEMPERATURE LIQUID-PHASE EPITAXY GROWTH FOR ROOM-TEMPERATURE CW OPERATION OF 1.55-MU-M INGAASP-INP DOUBLE-HETEROSTRUCTURE LASER
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[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 309 - 310
[8] TAKAHEI K, UNPUBLISHED
[9] INGAASP DOUBLE HETEROSTRUCTURE LASERS (LAMBDA=1.3MU-M) WITH ETCHED REFLECTORS
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[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 518 - 520