DRY-ETCHED-CAVITY PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS

[1] GAAS AND ALGAAS ANISOTROPIC FINE PATTERN ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 402 - 405

[2] ALGAAS LASERS WITH MICRO-CLEAVED MIRRORS SUITABLE FOR MONOLITHIC INTEGRATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 289 - 290

[3] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338

[4] SHORT-CAVITY GAALAS LASER BY WET CHEMICAL ETCHING [J]. ELECTRONICS LETTERS, 1982, 18 (20) : 879 - 880

[5] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 681 - 683

[6] OXYGEN ION-BEAM ETCHING FOR PATTERN TRANSFER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 34 - 37

[7] PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 728 - 731

[8] GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) : 72 - 82

[9] GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3503 - 3509

[10] NAGASAKA H, 1982, P S DRY PROCESS, P79

[1] GAAS AND ALGAAS ANISOTROPIC FINE PATTERN ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 402 - 405

[2] ALGAAS LASERS WITH MICRO-CLEAVED MIRRORS SUITABLE FOR MONOLITHIC INTEGRATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 289 - 290

[3] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338

[4] SHORT-CAVITY GAALAS LASER BY WET CHEMICAL ETCHING [J]. ELECTRONICS LETTERS, 1982, 18 (20) : 879 - 880

[5] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 681 - 683

[6] OXYGEN ION-BEAM ETCHING FOR PATTERN TRANSFER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 34 - 37

[7] PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 728 - 731

[8] GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) : 72 - 82

[9] GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3503 - 3509

[10] NAGASAKA H, 1982, P S DRY PROCESS, P79