ALGAAS/GAAS BURIED MULTIQUANTUM WELL LASERS WITH A REACTIVE ION ETCHED WINDOW FACET

被引：16

作者：

SEMURA, S

OHTA, T

KURODA, T

NAKASHIMA, H

机构：

[1] Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 06期

关键词：

ETCHING - Applications - SEMICONDUCTING ALUMINUM COMPOUNDS - Applications - SEMICONDUCTING GALLIUM ARSENIDE - Applications;

D O I：

10.1143/JJAP.24.L463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reactive-ion etching (RIE) process in fabricating mirror facets for AlGaAs/GaAs buried multiquantum well (BMQW) lasers has been developed. The lasers have a window structure where a mirror is formed by RIE. Window and BMQW structures are fabricated by Zn-diffusion-induced disordering. Because of no carrier injection, the damage caused by RIE does not affect the characteristics of the lasers. The lasers having one facet formed by RIE and the other by cleaving operate in the fundamental transverse mode. A low threshold current (25 mA) and high external quantum efficiency are comparable to those of cleaved lasers.

引用

页码：L463 / L465

页数：3

共 27 条

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