INGAASP-INP BURIED-HETEROSTRUCTURE LASERS (LAMBDA=1.5-MU-M) WITH CHEMICALLY ETCHED MIRRORS

被引：19

作者：

ADACHI, S

KAWAGUCHI, H

TAKAHEI, K

NOGUCHI, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.329480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5843 / 5845

页数：3

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[9] INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) : L218 - L220
[10] LPE GROWTH OF 1.5-1.6-MU-M IN1-XGAXAS1-YPY CRYSTALS BY A MODIFIED SOURCE-SEED METHOD
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[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) : 541 - 550