GAINASP-INP DH LASERS WITH A CHEMICALLY ETCHED FACET

被引：14

作者：

IGA, K

POLLACK, MA

MILLER, BI

MARTIN, RJ

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 10期

关键词：

D O I：

10.1109/JQE.1980.1070360

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1044 / 1047

页数：4

相关论文

共 17 条

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