GALNASP-INP DH LASERS AND RELATED FABRICATING TECHNIQUES FOR INTEGRATION

Liquid phase epitaxy and wet chemical etching techniques were investigated for the purpose of obtaining integrated GaxInl-xASyPl-y/InP lasers. Selective growth of a GaInAsP layer on channeled (100) InP substrates was demonstrated. A new chemical etchant was found which can etch InP and GaInAsP with smooth surfaces and perpendicular facets. By using this etching technique, facet and stripe geometries were fabricated. Homoisolation stripe (HIS) DH lasers were investigated. The dispersion of the lasing wavelength was measured to be ±1.2 percent around the 1.22 µm room temperature oscillation wavelength. The temperature dependence of the recombination lifetime TS was measured and it was found that rs α 1/d, when the temperature was varied. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.