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CHEMICAL ETCHING CHARACTERISTICS OF (001)INP
被引:142
作者
:
ADACHI, S
论文数:
0
引用数:
0
h-index:
0
ADACHI, S
KAWAGUCHI, H
论文数:
0
引用数:
0
h-index:
0
KAWAGUCHI, H
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1981年
/ 128卷
/ 06期
关键词
:
D O I
:
10.1149/1.2127633
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1342 / 1349
页数:8
相关论文
共 18 条
[1]
SELECTIVELY ETCHED DIFFRACTION GRATINGS IN GAAS
[J].
COMERFORD, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
COMERFORD, L
;
ZORY, P
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
ZORY, P
.
APPLIED PHYSICS LETTERS,
1974,
25
(04)
:208
-210
[2]
CHEMICAL ETCHANT FOR SELECTIVE REMOVAL OF GAAS THROUGH SIO2 MASKS
[J].
GANNON, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
GANNON, JJ
;
NUESE, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
NUESE, CJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(09)
:1215
-1219
[3]
ETCHING BEHAVIOR OF THE (110) AND (100) SURFACES OF INSB
[J].
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
;
LAVINE, MC
论文数:
0
引用数:
0
h-index:
0
LAVINE, MC
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(05)
:433
-436
[4]
CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS
[J].
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
;
LAVINE, MC
论文数:
0
引用数:
0
h-index:
0
LAVINE, MC
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(05)
:427
-433
[5]
METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP
[J].
HUBER, A
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
HUBER, A
;
LINH, NT
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
LINH, NT
.
JOURNAL OF CRYSTAL GROWTH,
1975,
29
(01)
:80
-84
[6]
CHEMICAL ETCHING OF INP AND GAINASP FOR FABRICATING LASER-DIODES AND INTEGRATED OPTICAL CIRCUITS
[J].
KAMBAYASH, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
KAMBAYASH, T
;
KITAHARA, C
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
KITAHARA, C
;
IGA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
IGA, K
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(01)
:79
-85
[7]
KERN W, 1978, RCA REV, V39, P278
[8]
SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
[J].
LIDA, S
论文数:
0
引用数:
0
h-index:
0
LIDA, S
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(05)
:768
-&
[9]
PHOTO-ETCHING OF INP MESAS FOR PRODUCTION OF MM-WAVE TRANSFERRED-ELECTRON OSCILLATORS
[J].
LUBZENS, D
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
LUBZENS, D
.
ELECTRONICS LETTERS,
1977,
13
(07)
:171
-172
[10]
GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING
[J].
MERZ, JL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MERZ, JL
;
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LOGAN, RA
;
SERGENT, AM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SERGENT, AM
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1979,
15
(02)
:72
-82
←
1
2
→
共 18 条
[1]
SELECTIVELY ETCHED DIFFRACTION GRATINGS IN GAAS
[J].
COMERFORD, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
COMERFORD, L
;
ZORY, P
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
ZORY, P
.
APPLIED PHYSICS LETTERS,
1974,
25
(04)
:208
-210
[2]
CHEMICAL ETCHANT FOR SELECTIVE REMOVAL OF GAAS THROUGH SIO2 MASKS
[J].
GANNON, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
GANNON, JJ
;
NUESE, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
NUESE, CJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(09)
:1215
-1219
[3]
ETCHING BEHAVIOR OF THE (110) AND (100) SURFACES OF INSB
[J].
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
;
LAVINE, MC
论文数:
0
引用数:
0
h-index:
0
LAVINE, MC
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(05)
:433
-436
[4]
CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS
[J].
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
;
LAVINE, MC
论文数:
0
引用数:
0
h-index:
0
LAVINE, MC
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(05)
:427
-433
[5]
METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP
[J].
HUBER, A
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
HUBER, A
;
LINH, NT
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
LINH, NT
.
JOURNAL OF CRYSTAL GROWTH,
1975,
29
(01)
:80
-84
[6]
CHEMICAL ETCHING OF INP AND GAINASP FOR FABRICATING LASER-DIODES AND INTEGRATED OPTICAL CIRCUITS
[J].
KAMBAYASH, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
KAMBAYASH, T
;
KITAHARA, C
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
KITAHARA, C
;
IGA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LAB,MIDORI KU,YOKOHAMA 227,JAPAN
IGA, K
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(01)
:79
-85
[7]
KERN W, 1978, RCA REV, V39, P278
[8]
SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
[J].
LIDA, S
论文数:
0
引用数:
0
h-index:
0
LIDA, S
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(05)
:768
-&
[9]
PHOTO-ETCHING OF INP MESAS FOR PRODUCTION OF MM-WAVE TRANSFERRED-ELECTRON OSCILLATORS
[J].
LUBZENS, D
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
LUBZENS, D
.
ELECTRONICS LETTERS,
1977,
13
(07)
:171
-172
[10]
GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING
[J].
MERZ, JL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MERZ, JL
;
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LOGAN, RA
;
SERGENT, AM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SERGENT, AM
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1979,
15
(02)
:72
-82
←
1
2
→