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CHEMICAL ETCHANT FOR SELECTIVE REMOVAL OF GAAS THROUGH SIO2 MASKS
被引:42
作者
:
GANNON, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
GANNON, JJ
[
1
]
NUESE, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
NUESE, CJ
[
1
]
机构
:
[1]
RCA LABS, PRINCETON, NJ 08540 USA
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1974年
/ 121卷
/ 09期
关键词
:
D O I
:
10.1149/1.2402016
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1215 / 1219
页数:5
相关论文
共 13 条
[1]
EVALUATION OF A NEW POLISH FOR GALLIUM ARSENIDE USING A PEROXIDE-ALKALINE SOLUTION
DYMENT, JC
论文数:
0
引用数:
0
h-index:
0
DYMENT, JC
ROZGONYI, GA
论文数:
0
引用数:
0
h-index:
0
ROZGONYI, GA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(08)
: 1346
-
&
[2]
FAUST JW, 1962, PREPARATION 3 5 COMP, V1
[3]
A POLISHING ETCHANT FOR III-V SEMICONDUCTORS
FULLER, CS
论文数:
0
引用数:
0
h-index:
0
FULLER, CS
ALLISON, HW
论文数:
0
引用数:
0
h-index:
0
ALLISON, HW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(09)
: 880
-
880
[4]
ETCHING AND INHIBITION OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS - INSB
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
LAVINE, MC
论文数:
0
引用数:
0
h-index:
0
LAVINE, MC
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1960,
14
: 169
-
&
[5]
CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
LAVINE, MC
论文数:
0
引用数:
0
h-index:
0
LAVINE, MC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(05)
: 427
-
433
[6]
GOLDSMITH N, 1967, RCA REV, V28, P153
[7]
SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
LIDA, S
论文数:
0
引用数:
0
h-index:
0
LIDA, S
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(05)
: 768
-
&
[8]
GAAS VAPOR-GROWN BIPOLAR TRANSISTORS
NUESE, CJ
论文数:
0
引用数:
0
h-index:
0
NUESE, CJ
GOSSENBERGER, HF
论文数:
0
引用数:
0
h-index:
0
GOSSENBERGER, HF
ENSTROM, RE
论文数:
0
引用数:
0
h-index:
0
ENSTROM, RE
DEAN, RH
论文数:
0
引用数:
0
h-index:
0
DEAN, RH
GANNON, JJ
论文数:
0
引用数:
0
h-index:
0
GANNON, JJ
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(01)
: 81
-
+
[9]
NUESE CJ, 1972, NAS827086 CONTR
[10]
ENHANCE GAAS ETCH RATES NEAR EDGES OF A PROTECTIVE MASK
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(09)
: 958
-
&
←
1
2
→
共 13 条
[1]
EVALUATION OF A NEW POLISH FOR GALLIUM ARSENIDE USING A PEROXIDE-ALKALINE SOLUTION
DYMENT, JC
论文数:
0
引用数:
0
h-index:
0
DYMENT, JC
ROZGONYI, GA
论文数:
0
引用数:
0
h-index:
0
ROZGONYI, GA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(08)
: 1346
-
&
[2]
FAUST JW, 1962, PREPARATION 3 5 COMP, V1
[3]
A POLISHING ETCHANT FOR III-V SEMICONDUCTORS
FULLER, CS
论文数:
0
引用数:
0
h-index:
0
FULLER, CS
ALLISON, HW
论文数:
0
引用数:
0
h-index:
0
ALLISON, HW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(09)
: 880
-
880
[4]
ETCHING AND INHIBITION OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS - INSB
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
LAVINE, MC
论文数:
0
引用数:
0
h-index:
0
LAVINE, MC
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1960,
14
: 169
-
&
[5]
CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
LAVINE, MC
论文数:
0
引用数:
0
h-index:
0
LAVINE, MC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(05)
: 427
-
433
[6]
GOLDSMITH N, 1967, RCA REV, V28, P153
[7]
SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
LIDA, S
论文数:
0
引用数:
0
h-index:
0
LIDA, S
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(05)
: 768
-
&
[8]
GAAS VAPOR-GROWN BIPOLAR TRANSISTORS
NUESE, CJ
论文数:
0
引用数:
0
h-index:
0
NUESE, CJ
GOSSENBERGER, HF
论文数:
0
引用数:
0
h-index:
0
GOSSENBERGER, HF
ENSTROM, RE
论文数:
0
引用数:
0
h-index:
0
ENSTROM, RE
DEAN, RH
论文数:
0
引用数:
0
h-index:
0
DEAN, RH
GANNON, JJ
论文数:
0
引用数:
0
h-index:
0
GANNON, JJ
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(01)
: 81
-
+
[9]
NUESE CJ, 1972, NAS827086 CONTR
[10]
ENHANCE GAAS ETCH RATES NEAR EDGES OF A PROTECTIVE MASK
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(09)
: 958
-
&
←
1
2
→