ETCHING AND INHIBITION OF THE (III) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS - INSB

被引:90
作者
GATOS, HC
LAVINE, MC
机构
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D O I
10.1016/0022-3697(60)90225-0
中图分类号
O6 [化学];
学科分类号
0703 ;
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页码:169 / &
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[1]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[2]  
Cabrera N., 1957, SEMICONDUCTOR SURFAC, P327
[3]   ETCHING OF SINGLE CRYSTAL GERMANIUM SPHERES [J].
ELLIS, RC .
JOURNAL OF APPLIED PHYSICS, 1954, 25 (12) :1497-1499
[4]  
GATOS HC, J APPL PHYS
[5]  
GATOS HC, UNPUB J ELECTROCHEM
[6]   DISLOCATION ETCH PIT FORMATION IN LITHIUM FLUORIDE [J].
GILMAN, JJ ;
JOHNSTON, WG ;
SEARS, GW .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (05) :747-754
[7]  
SCHELL HA, 1957, Z METALLKD, V48, P158
[8]   DISLOCATIONS AND SELECTIVE ETCH PITS IN INSB [J].
VENABLES, JD ;
BROUDY, RM .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1025-1028
[9]   X-RAY METHOD FOR THE DIFFERENTIATION OF (111) SURFACES IN AIIIBV SEMICONDUCTING COMPOUNDS [J].
WAREKOIS, EP ;
METZGER, PH .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) :960-962
[10]  
WAREKOIS EP, UNPUB