GAAS VAPOR-GROWN BIPOLAR TRANSISTORS

[1] DETECTION OF SELENIUM CLUSTERING IN GAAS BY TRANSMISSION ELECTRON MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 760 - &

[2] ANTELL J, 1966, SEP P INT S I PHYS P

[3] DOUBLE DIFFUSED GALLIUM ARSENIDE TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 255 - &

[4] HIGH-TEMPERATURE BEHAVIOR OF GAAS JUNCTIONS PREPARED BY DIFFERENT TECHNIQUES [J]. SOLID-STATE ELECTRONICS, 1971, 14 (03) : 191 - &

[5] BELASCO M, 1965, AF336152101 CONTR

[6] BERSON BE, 1970, RCA REV, V31, P20

[7] REFINED STEP-RECOVERY TECHNIQUE FOR MEASURING MINORITY CARRIER LIFETIMES AND RELATED PARAMETERS IN ASYMMETRIC P-N JUNCTION DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (03) : 151 - &

[8] DISMUKES JP, 1969, NAS122091 CONTR

[9] DOERBECK FH, 1968, 2 P INT S GALL ARS I, P205

[10] ENSTROM RE, 1970, 3 P INT S GAAS REL C

[1] DETECTION OF SELENIUM CLUSTERING IN GAAS BY TRANSMISSION ELECTRON MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 760 - &

[2] ANTELL J, 1966, SEP P INT S I PHYS P

[3] DOUBLE DIFFUSED GALLIUM ARSENIDE TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 255 - &

[4] HIGH-TEMPERATURE BEHAVIOR OF GAAS JUNCTIONS PREPARED BY DIFFERENT TECHNIQUES [J]. SOLID-STATE ELECTRONICS, 1971, 14 (03) : 191 - &

[5] BELASCO M, 1965, AF336152101 CONTR

[6] BERSON BE, 1970, RCA REV, V31, P20

[7] REFINED STEP-RECOVERY TECHNIQUE FOR MEASURING MINORITY CARRIER LIFETIMES AND RELATED PARAMETERS IN ASYMMETRIC P-N JUNCTION DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (03) : 151 - &

[8] DISMUKES JP, 1969, NAS122091 CONTR

[9] DOERBECK FH, 1968, 2 P INT S GALL ARS I, P205

[10] ENSTROM RE, 1970, 3 P INT S GAAS REL C