HIGH-TEMPERATURE BEHAVIOR OF GAAS JUNCTIONS PREPARED BY DIFFERENT TECHNIQUES

被引：3

作者：

BEHRNDT, KH

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(71)90032-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：191 / &

共 13 条

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[2] BEHRNDT KH, 1968, 1968 P MICR C, pB4
[3] DISMUKES JP, 1969, NAS122091 CONTR
[4] DUNLAP HL, 1969, NAS12124 CONTR
[5] HUNSPERGER RG, 1970, T MET SOC AIME, V1, P603
[6] JENNY DA, 1959, J APPL PHYS, V30, P1962
[7] AGING EFFECTS IN GAAS ELECTROLUMINESCENT DIODES
LANZA, C
KONNERTH, KL
KELLY, CE
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (01) : 21 - &
[8] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS
MANASEVIT, HM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +
[9] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
MANASEVIT, HM
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 156 - +
[10] MANASEVIT HM, 1970, NAS12010 CONTR