AN ALGAAS LASER WITH HIGH-QUALITY DRY ETCHED MIRRORS FABRICATED USING AN ULTRAHIGH-VACUUM INSITU DRY ETCHING AND DEPOSITION PROCESSING SYSTEM

被引：21

作者：

UCHIDA, M

ISHIKAWA, S

TAKADO, N

ASAKAWA, K

机构：

[1] NEC, Kawasaki, Jpn

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 11期

关键词：

Manuscript received January 29; 1988; revised May 5; 1988. This work was supported in part by the Agency of Industrial Science and Technology; Ministry of International Trade and Industry. The authors are with the Opto-Electronics Research Laboratories; NEC Corporation; 4-1-1; Miyazaki; Miyamae-ku; Kawasaki; 213; Japan. IEEE Log Number 8823282;

D O I：

10.1109/3.8560

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2170 / 2177

页数：8

共 17 条

[1] GAAS AND ALGAAS ANISOTROPIC FINE PATTERN ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM
ASAKAWA, K
SUGATA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 402 - 405
[2] LOW THRESHOLD GAAS/GAALAS BH LASERS WITH ION-BEAM-ETCHED MIRRORS
BOUADMA, N
RIOU, J
KAMPFER, A
[J]. ELECTRONICS LETTERS, 1985, 21 (13) : 566 - 568
[3] FABRICATION AND CHARACTERISTICS OF ION-BEAM ETCHED CAVITY INP/INGAASP BH LASERS
BOUADMA, N
HOGREL, JF
CHARIL, J
CARRE, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 909 - 914
[4] MONOLITHIC 2-SECTION GAINASP-INP ACTIVE-OPTICAL-RESONATOR DEVICES FORMED BY REACTIVE ION ETCHING
COLDREN, LA
MILLER, BI
IGA, K
RENTSCHLER, JA
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 315 - 317
[5] MONOLITHIC TWO-DIMENSIONAL SURFACE-EMITTING ARRAYS OF GAAS/ALGAAS DIODE-LASERS
DONNELLY, JP
GOODHUE, WD
WINDHORN, TH
BAILEY, RJ
LAMBERT, SA
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (15) : 1138 - 1140
[6] GOKAN H, 1984, J VAC SCI TECHNOL B, V2, P24
[7] CATASTROPHIC DAMAGE OF ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASER MATERIAL
HENRY, CH
PETROFF, PM
LOGAN, RA
MERRITT, FR
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3721 - 3732
[8] TRANSVERSE-MODE STABILIZED ALGAAS-GAAS PLANO-CONVEX WAVE-GUIDE LASER MADE BY A SINGLE-STEP LIQUID-PHASE EPITAXY
IDE, Y
FURUSE, T
SAKUMA, I
NISHIDA, K
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 121 - 123
[9] SURFACE-EMITTING GAINASP-INP LASER WITH LOW THRESHOLD CURRENT AND HIGH-EFFICIENCY
LIAU, ZL
WALPOLE, JN
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (02) : 115 - 117
[10] LOW-THRESHOLD INGAASP/INP 1.3-MUM DOUBLY BURIED-HETEROSTRUCTURE LASERS WITH A REACTIVE-ION-ETCHED FACET
SAITO, H
NOGUCHI, Y
NAGAI, H
[J]. ELECTRONICS LETTERS, 1986, 22 (01) : 36 - 38

← 1 2 →