FABRICATION AND CHARACTERISTICS OF ION-BEAM ETCHED CAVITY INP/INGAASP BH LASERS

被引：22

作者：

BOUADMA, N

HOGREL, JF

CHARIL, J

CARRE, M

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

D O I：

10.1109/JQE.1987.1073404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：909 / 914

页数：6

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