ETCHED MIRROR AND GROOVE-COUPLED GALNASP/INP LASER DEVICES FOR INTEGRATED-OPTICS

被引：87

作者：

COLDREN, LA ^{[1
]}

FURUYA, K ^{[1
]}

MILLER, BI ^{[1
]}

RENTSCHLER, JA ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 10期

关键词：

D O I：

10.1109/JQE.1982.1071404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1679 / 1688

页数：10

共 40 条

[1] CHEMICAL ETCHING CHARACTERISTICS OF (001)INP
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[2] INGAASP-INP BURIED-HETEROSTRUCTURE LASERS (LAMBDA=1.5-MU-M) WITH CHEMICALLY ETCHED MIRRORS
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[3] CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS DIODE-LASERS - STRUCTURES AND ELECTROOPTICAL CHARACTERISTICS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (12) : 2290 - 2309
[4] BOTEZ D, COMMUNICATION
[5] SHORT-CAVITY SINGLE-MODE 1.3 MU-INGAASP LASERS WITH EVAPORATED HIGH-REFLECTIVITY MIRRORS
BURRUS, CA
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[J]. ELECTRONICS LETTERS, 1981, 17 (25-2) : 954 - 956
[6] COMBINED DRY AND WET ETCHING TECHNIQUES TO FORM PLANAR (011) FACETS IN GAINASP-INP DOUBLE HETEROSTRUCTURES
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[J]. ELECTRONICS LETTERS, 1982, 18 (05) : 235 - 237
[7] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET
COLDREN, LA
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MILLER, BI
RENTSCHLER, JA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 681 - 683
[8] MONOLITHIC 2-SECTION GAINASP-INP ACTIVE-OPTICAL-RESONATOR DEVICES FORMED BY REACTIVE ION ETCHING
COLDREN, LA
MILLER, BI
IGA, K
RENTSCHLER, JA
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 315 - 317
[9] DIRECTIONAL REACTIVE-ION-ETCHING OF INP WITH CL-2 CONTAINING GASES
COLDREN, LA
RENTSCHLER, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 225 - 230
[10] COLDREN LA, J ELECTROCHEM SOC

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