MONOLITHIC 2-SECTION GAINASP-INP ACTIVE-OPTICAL-RESONATOR DEVICES FORMED BY REACTIVE ION ETCHING

被引：127

作者：

COLDREN, LA

MILLER, BI

IGA, K

RENTSCHLER, JA

机构：

来源：

关键词：

D O I：

10.1063/1.92353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：315 / 317

页数：3

共 14 条

[1] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET
COLDREN, LA
IGA, K
MILLER, BI
RENTSCHLER, JA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 681 - 683
[2] COLDREN LA, 1980, 38TH ANN DEV RES C P
[3] FOWLER AB, 1966, Patent No. 3303431
[4] GALNASP-LNP LASER WITH MONOLITHICALLY INTEGRATED MONITORING DETECTOR
IGA, K
MILLER, BI
[J]. ELECTRONICS LETTERS, 1980, 16 (09) : 342 - 343
[5] IGA K, UNPUBLISHED
[6] KISHINO K, 1978, JPN J APPL PHYS, V17
[7] LANGE R, 1976, Patent No. 3999146
[8] ANALYSIS OF A PROPOSED BISTABLE INJECTION LASER
LASHER, GJ
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 707 - 716
[9] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER
LEHENY, RF
NAHORY, RE
POLLACK, MA
BALLMAN, AA
BEEBE, ED
DEWINTER, JC
MARTIN, RJ
[J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355
[10] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M
MIYA, T
TERUNUMA, Y
HOSAKA, T
MIYASHITA, T
[J]. ELECTRONICS LETTERS, 1979, 15 (04) : 106 - 108