COMBINED DRY AND WET ETCHING TECHNIQUES TO FORM PLANAR (011) FACETS IN GAINASP-INP DOUBLE HETEROSTRUCTURES

被引：15

作者：

COLDREN, LA

FURUYA, K

MILLER, BI

RENTSCHLER, JA

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 05期

关键词：

D O I：

10.1049/el:19820160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：235 / 237

页数：3

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