CRYSTALLOGRAPHIC FACETS CHEMICALLY ETCHED IN GAINASP-INP FOR INTEGRATED-OPTICS

被引：18

作者：

FURUYA, K

COLDREN, LA

MILLER, BI

RENTSCHLER, JA

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 17期

关键词：

D O I：

10.1049/el:19810410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：582 / 583

页数：2

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[1] NEW 1-6-MU-M WAVELENGTH GAINASP-INP BURIED HETEROSTRUCTURE LASERS
ARAI, S
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ITAYA, Y
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KISHINO, K
[J]. ELECTRONICS LETTERS, 1980, 16 (10) : 349 - 350
[2] GAINASP-INP DH LASERS WITH A CHEMICALLY ETCHED FACET
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (10) : 1044 - 1047
[3] CHEMICAL ETCHING OF INP AND GAINASP FOR FABRICATING LASER-DIODES AND INTEGRATED OPTICAL CIRCUITS
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KITAHARA, C
IGA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : 79 - 85
[4] GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING
MERZ, JL
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SERGENT, AM
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) : 72 - 82
[5] HIGH-OUTPUT POWER INGAASP (LAMBDA=1.3-MU-M) STRIP-BURIED HETEROSTRUCTURE LASERS
NELSON, RJ
WRIGHT, PD
BARNES, PA
BROWN, RL
CELLA, T
SOBERS, RG
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 358 - 360
[6] CHEMICAL ETCHING OF [111] AND [100] SURFACES OF INP
TUCK, B
BAKER, AJ
[J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (11) : 1559 - 1566
[7] INGAASP DOUBLE HETEROSTRUCTURE LASERS (LAMBDA=1.3MU-M) WITH ETCHED REFLECTORS
WRIGHT, PD
NELSON, RJ
CELLA, T
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 518 - 520