METHOD FOR IMAGING SIDEWALLS BY ATOMIC-FORCE MICROSCOPY

被引：175

作者：

MARTIN, Y

WICKRAMASINGHE, HK

机构：

[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 19期

关键词：

D O I：

10.1063/1.111578

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a new method for imaging vertical and near vertical surface features by atomic force microscopy (AFM). It is based on an attractive force mode AFM, equipped with a special boot-shaped tip, coupled with a measurement of slope and with a special tracking technique. Surface profiling is achieved through a novel servo and scanning system. Mapping sidewall profile opens the door to measurement of critical dimensions (width and wall angles) of lines and trenches in integrated circuits, with high accuracy.

引用

页码：2498 / 2500

页数：3