ATOMISTIC MODELS OF VACANCY-MEDIATED DIFFUSION IN SILICON

被引:65
作者
DUNHAM, ST
WU, CD
机构
[1] Department of Electrical, Computer and Systems Engineering, Boston University, Boston
关键词
D O I
10.1063/1.360156
中图分类号
O59 [应用物理学];
学科分类号
摘要
Vacancy-mediated diffusion of dopants in silicon is investigated using Monte Carlo simulations of hopping diffusion, as well as analytic approximations based on atomistic considerations. Dopant/vacancy interaction potentials are assumed to extend out to third-nearest neighbor distances, as required for pair diffusion theories. Analysis focusing on the third-nearest neighbor sites as bridging configurations for uncorrelated hops leads to an improved analytic model for vacancy-mediated dopant diffusion. The Monte Carlo simulations of vacancy motion on a doped silicon lattice verify the analytic results for moderate doping levels. For very high doping (> 2 X 10(20) cm(-3)) the simulations show a very rapid increase in pair diffusivity due to interactions of vacancies with more than one dopant atom. This behavior has previously been observed experimentally for group IV and V atoms in silicon [Nylandsted Larsen et al., J. Appl. Phys. 73, 691 (1993)], and the simulations predict both the point of onset and doping dependence of the experimentally observed diffusivity enhancement. (C) 1995 American Institute of Physics.
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页码:2362 / 2366
页数:5
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