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PROPAGATION OF SURFACE ELECTROMAGNETIC-WAVES ON N-TYPE GAAS IN THE FAR INFRARED

被引：9
作者：
BEGLEY, DL
ALEXANDER, RW
WARD, CA
BELL, RJ
机构：
[1] Physics Department, University of Missouri-Rolla, Rolla
来源：
SURFACE SCIENCE | 1979年 / 81卷 / 01期
关键词：
D O I：
10.1016/0039-6028(79)90514-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The far infrared (84.2 cm-1) propagation distance of surface electromagnetic waves on samples of single crystal GaAs with varied carrier concentrations has been measured using the twoprism technique. The experimental propagation distances agree well with theoretical values obtained from computer calculations using the exact two media dispersion relation. It was found that the propagation of the SEW is strongly dependent upon the free carrier concentration of the GaAs sample as expected. It is demonstrated that a simple classical theory of SEW works for GaAs-air interfaces in the far infrared. © 1979.
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页码：238 / 244
页数：7
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