EFFECTS OF MECHANICAL POLISHING DAMAGE ON IR REFLECTANCE AND ATTENUATED TOTAL REFLECTION SPECTRA OF N-TYPE GAAS

被引：17

作者：

HOLM, RT ^{[1
]}

PALIK, ED ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.569013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：889 / 893

页数：5

共 24 条

[1] SPECULAR REFLECTANCE OF ALUMINIZED GROUND GLASS AND HEIGHT DISTRIBUTION OF SURFACE IRREGULARITIES [J].

BENNETT, HE .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1963, 53 (12) :1389-+

[2] DEPTH OF SURFACE DAMAGE DUE TO ABRASION ON GERMANIUM [J].

BUCK, TM ;

MCKIM, FS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (11) :593-597

[3]

COCHRAN W, 1961, J APPL PHYS, V32, P2102, DOI 10.1063/1.1777024

[4] EFFECT OF A CHARGE LAYER ON SURFACE-PLASMON-POLARITON DISPERSION CURVE [J].

CUNNINGHAM, SL ;

MARADUDIN, AA ;

WALLIS, RF .

PHYSICAL REVIEW B, 1974, 10 (08) :3342-3355

[5] OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING [J].

EVANS, DJ ;

USHIODA, S .

PHYSICAL REVIEW B, 1974, 9 (04) :1638-1645

[6]

FAUST JW, 1962, COMPOUND SEMICONDUCT, P445

[7]

FLUGGE S, 1956, HANDBUCH PHYSIK ED, V24, P461

[8] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS .2. SURFACE DAMAGE [J].

GATOS, HC ;

LAVINE, MC ;

WAREKOIS, EP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) :645-649

[9] DETERMINATION OF EFFECTIVE MASS, CARRIER RELAXATION-TIME AND HALL FACTOR FROM PLASMA EDGE REFLECTION STUDIES IN SEMICONDUCTORS [J].

GOPAL, V .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (04) :343-345

[10] INFRARED LATTICE REFLECTION SPECTRA OF III-V COMPOUND SEMICONDUCTORS [J].

HASS, M ;

HENVIS, BW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) :1099-+

← 1 2 3 →