DETERMINATION OF EFFECTIVE MASS, CARRIER RELAXATION-TIME AND HALL FACTOR FROM PLASMA EDGE REFLECTION STUDIES IN SEMICONDUCTORS

被引：4

作者：

GOPAL, V ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,LUCKNOW RD,TIMARPUR,DELHI 110007,INDIA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1975年 / 36卷 / 04期

关键词：

D O I：

10.1016/0022-3697(75)90033-5

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：343 / 345

页数：3

共 14 条

[1] FREE ELECTRON EFFECTIVE MASS IN PBSE AND PB-SNSE MIXED CRYSTALS [J].

AZIZA, A ;

AMZALLAG, E ;

BALKANSKI, M .

SOLID STATE COMMUNICATIONS, 1970, 8 (11) :873-+

[2] OPTICAL PROPERTIES OF SOME PB1-XSNXTE ALLOYS DETERMINED FROM INFRARED PLASMA REFLECTIVITY MEASUREMENTS [J].

DIONNE, G ;

WOOLLEY, JC .

PHYSICAL REVIEW B, 1972, 6 (10) :3898-&

[3]

DIXON JR, 1969, OPTICAL PROPERTIES S, pCH3

[4] MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIINS BY INFRARED PLASMA REFLECTION [J].

GARDNER, EE ;

KAPPALLO, W ;

GORDON, CR .

APPLIED PHYSICS LETTERS, 1966, 9 (12) :432-&

[5] EFFECTIVE MASS FROM PLASMA EDGE REFLECTION MEASUREMENTS [J].

GAUR, NKS .

PHYSICA, 1970, 48 (01) :112-&

[6] PLASMA EDGE REFLECTION STUDY OF CONDUCTION-BAND EFFECTIVE MASS IN N-TYPE SILICON [J].

GOPAL, V .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 57 (01) :K69-K72

[7]

HANNAY NB, 1959, SEMICONDUCTOR

[8] USE OF PLASMA EDGE REFLECTION MEASUREMENTS IN STUDY OF SEMICONDUCTORS [J].

MOSS, TS ;

HAWKINS, TDF ;

BURRELL, GJ .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (05) :1435-&

[9] CARRIER RELAXATION TIME FROM INFRARED REFLECTION SPECTRA IN SEMICONDUCTORS [J].

NAVASCUE.G ;

FLORES, F .

SOLID STATE COMMUNICATIONS, 1971, 9 (14) :1267-&

[10] EFFECT OF ENERGY DISTRIBUTION IN SEMICONDUCTOR CHARGE-CARRIERS ON EFFECTIVE MASS DETERMINATION FROM INFRARED PLASMA REFLECTION [J].

RHEINLANDER, B .

PHYSICS LETTERS A, 1969, A 29 (07) :420-+

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