SI-C-60-SI(111)-(7X7) INTERACTIONS - A SCANNING-TUNNELING-MICROSCOPY STUDY

被引：10

作者：

CHEN, D ^{[1
]}

CHEN, J ^{[1
]}

SARID, D ^{[1
]}

机构：

[1] UNIV ARIZONA,CTR OPT SCI,TUCSON,AZ 85721

来源：

SURFACE SCIENCE | 1994年 / 321卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

CARBON; SILICON; TUNNELING;

D O I：

10.1016/0039-6028(94)90039-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning tunneling microscopy (STM) has been used to study the interaction of deposited silicon atoms with C-60 molecules adsorbed on Si(111)-(7x7) surfaces. Zn spite of the known strong bonding of C-60 molecules to the silicon surfaces, we find the unexpected result of lack of bonding of the deposited silicon atoms to the adsorbed C-60 molecules, at temperatures up to 600 degrees C. The strong C-60-substrate interaction is revealed from the excessive substrate surface strain induced by the C-60 adsorbates, which creates a variety of metastable structures on the silicon surface.

引用

页码：190 / 194

页数：5

共 10 条

[1] OBSERVATION OF C-60 CAGE OPENING ON SI(111)-(7X7) [J].