NEGATIVE-RESISTANCE AND DISTRIBUTED GAIN IN SUBMICRON SEMICONDUCTOR DIODES USING ANALYTICAL SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION

被引：3

作者：

KROWNE, CM

机构：

[1] US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1987年 / 62卷 / 04期

关键词：

D O I：

10.1080/00207218708921000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：483 / 506

页数：24

共 11 条

[1] NEW NEGATIVE CONDUCTANCE IN GAAS N+-N-N+ BALLISTIC DIODE - TIME-DEPENDENT COMPUTER-SIMULATION [J].

AISHIMA, A ;

FUKUSHIMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1983, 22 (12) :1889-1892

[2] NEW NEGATIVE CONDUCTANCES IN GAAS N+-N-N+ BALLISTIC DIODES [J].

AISHIMA, A ;

FUKUSHIMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (04) :L255-L257

[3] NUMERICAL STUDY OF AN N-GALLIUM ARSENIDE DIODE DISTRIBUTED OSCILLATOR [J].

AISHIMA, A ;

FUKUSHIMA, Y .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1086-1092

[4] TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].

BLOTEKJAER, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+

[5] NUMERICAL-SIMULATION OF HOT-ELECTRON EFFECTS ON SOURCE-DRAIN BURNOUT CHARACTERISTICS OF GAAS POWER FETS [J].

BUOT, FA ;

SLEGER, KJ .

SOLID-STATE ELECTRONICS, 1984, 27 (12) :1067-1081

[6] HIGH-FREQUENCY EFFECTS OF BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS [J].

FRENSLEY, WR .

ELECTRON DEVICE LETTERS, 1980, 1 (07) :137-139

[7]

Harrington R. F., 1961, TIME HARMONIC ELECTR

[8]

Hockney, 1981, COMPUTER SIMULATION

[9] ELECTROMAGNETIC THEOREMS FOR COMPLEX ANISOTROPIC MEDIA [J].

KROWNE, CM .

IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, 1984, 32 (11) :1224-1230

[10] FOURIER TRANSFORMED MATRIX-METHOD OF FINDING PROPAGATION CHARACTERISTICS OF COMPLEX ANISOTROPIC LAYERED MEDIA [J].

KROWNE, CM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (12) :1617-1625

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