NUMERICAL-SIMULATION OF HOT-ELECTRON EFFECTS ON SOURCE-DRAIN BURNOUT CHARACTERISTICS OF GAAS POWER FETS

被引：13

作者：

BUOT, FA

SLEGER, KJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 12期

关键词：

D O I：

10.1016/0038-1101(84)90046-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1067 / 1081

页数：15

共 22 条

[1] TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].

BLOTEKJAER, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+

[2]

BUOT FA, 1983, SOLID STATE ELECTRON, V26, P617, DOI 10.1016/0038-1101(83)90016-3

[3]

CLARKE RC, 1983, 1983 P IEEE CORN C H, P25

[4] TWO-DIMENSIONAL NUMERICAL-SIMULATION OF ENERGY-TRANSPORT EFFECTS IN SI AND GAAS-MESFETS [J].

COOK, RK ;

FREY, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :970-977

[5]

CURTICE WR, 1981, 8TH BIENN CORN EL EN, P209

[6]

CURTICE WR, 1981, IEEE T ELECTRON DEVI, V28, P943

[7] GATE DRAIN AVALANCHE BREAKDOWN IN GAAS POWER MESFETS [J].

DAVID, JPR ;

SITCH, JE ;

STERN, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) :1548-1552

[8] PHYSICAL BASIS OF SHORT-CHANNEL MESFET OPERATION .2. TRANSIENT-BEHAVIOR [J].

FARICELLI, JV ;

FREY, J ;

KRUSIUS, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) :377-388

[9] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET [J].

FRENSLEY, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :962-970

[10] IMPROVEMENT OF DRAIN BREAKDOWN VOLTAGE OF GAAS POWER MESFETS BY A SIMPLE RECESS STRUCTURE [J].

FURUTSUKA, T ;

TSUJI, T ;

HASEGAWA, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :563-567

← 1 2 3 →