CDTE-LANGMUIR-FILM MIS STRUCTURES

被引：6

作者：

PETTY, MC

ROBERTS, GG

机构：

[1] Department of Applied Physics & Electronics, University of Durham, Durham DH1 3LE, South Road

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 12期

关键词：

Cadmium compounds; Langmuir films; Metal insulator-semiconductor devices;

D O I：

10.1049/el:19790238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Langmuir films based on cadmium stearate have been successfully deposited on to the surface of p-type CdTe. The measured C/V curves show, for the first time, the accumulation, depletion and weak-inversion regions typical of an ideal device. The G/V curves show a sharp peak in the depletion region at high frequencies which is thought to be due to losses at interface states. An initial estimate of the density yields an average value of 1011 states cm−2. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：335 / 336

页数：2

共 6 条

[1] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548
[2] MEASUREMENT OF EPITAXIAL LAYER RESISTIVITY USING MOS CAPACITANCE METHOD
GUPTA, DC
ANANTHA, NG
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (06): : 1108 - &
[3] GROWTH OF CADMIUM TELLURIDE BY SOLVENT EVAPORATION
LUNN, B
BETTRIDGE, V
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02): : 151 - 154
[4] PANDE KP, 1977, ELECTRON LETT, V13, P581
[5] IN P-LANGMUIR-FILM MISFET
ROBERTS, GG
PANDE, KP
BARLOW, WA
[J]. IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (06): : 169 - 175
[6] SZE SM, 1969, PHYSICS SEMICONDUCTO, P425

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