MEASUREMENT OF EPITAXIAL LAYER RESISTIVITY USING MOS CAPACITANCE METHOD

被引：5

作者：

GUPTA, DC

ANANTHA, NG

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 06期

关键词：

D O I：

10.1109/PROC.1967.5752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1108 / &

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[1] A POINT CONTACT METHOD OF EVALUATING EPITAXIAL LAYER RESISTIVITY
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[2] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
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[3] IRVIN JC, 1962, BELL SYST TECH J, V41, P388
[4] CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD
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[J]. SOLID-STATE ELECTRONICS, 1966, 9 (04) : 315 - &
[5] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS
THOMAS, CO
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MANZ, RC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1055 - 1061