A POINT CONTACT METHOD OF EVALUATING EPITAXIAL LAYER RESISTIVITY

被引：11

作者：

ALLEN, CC

CLEVENGER, LH

GUPTA, DC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1966年 / 113卷 / 05期

关键词：

D O I：

10.1149/1.2424007

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：508 / +

页数：1

共 10 条

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[3] A 3-POINT PROBE METHOD FOR ELECTRICAL CHARACTERIZATION OF EPITAXIAL FILMS [J].

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[4]

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[6]

IRVIN JC, 1962, BELL SYST TECH J, V41, P388

[7] AVALANCHE BREAKDOWN IN SILICON [J].

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[8]

Shields J., 1959, J ELECTRON CONTR, V6, P130, DOI 10.1080/00207215908937136

[9] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J].

THEUERER, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) :649-653

[10] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J].

THOMAS, CO ;

KAHNG, D ;

MANZ, RC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) :1055-1061

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