0.5 MU-M GATE LENGTH INP/IN0.75GA0.25AS/INP PSEUDOMORPHIC HEMT WITH HIGH DC AND RF PERFORMANCE

被引：9

作者：

KUSTERS, AM

FUNKE, T

SOMMER, V

WULLER, R

BRITTNER, S

KOHL, A

HEIME, K

机构：

[1] Institut für Halbleitertechnik, Lehrstuhl I, RWTH Aachen, D-5100 Aachen

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 10期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930562

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High performance InP/In0.75Ga0.25As/InP pseudomorphic double heterojunction (DH) HEMTs with a gate length of 0.5 mum are reported. Both DC and RF characteristics of this new type of Al-free HEMT demonstrate its suitability for microwave applications.

引用

收藏

页码：841 / 842

页数：2

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