KINK EFFECT IN SUBMICROMETER-GATE MBE-GROWN INALAS/INGAAS/INALAS HETEROJUNCTION MESFETS

被引：63

作者：

KUANG, JB

TASKER, PJ

WANG, GW

CHEN, YK

EASTMAN, LF

AINA, OA

HIER, H

FATHIMULLA, A

机构：

[1] FORD MICROELECTR INC,COLORADO SPRINGS,CO 80921

[2] ALLIED SIGNAL TECHNOL CTR,COLUMBIA,MD 21045

[3] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 12期

关键词：

D O I：

10.1109/55.20418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：630 / 632

页数：3

共 13 条

[1] OBSERVATION OF HIGH-FREQUENCY HIGH-FIELD INSTABILITY IN GAAS/INGAAS/ALGAAS DH-MODFETS AT K-BAND [J].

CHEN, YK ;

RADULESCU, DC ;

WANG, GW ;

NAJJAR, FE ;

EASTMAN, LF .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :1-3

[2] INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES [J].

CIRILLO, NC ;

SHUR, MS ;

ABROKWAH, JK .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :71-74

[3] BIAS DEPENDENCE AND LIGHT SENSITIVITY OF (AL,GA)AS/GAAS MODFETS AT 77-K [J].

DRUMMOND, TJ ;

FISCHER, RJ ;

KOPP, WF ;

MORKOC, H ;

LEE, K ;

SHUR, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1806-1811

[4] HIGH-PERFORMANCE INALAS/INGAAS HEMTS AND MESFETS [J].

FATHIMULLA, A ;

ABRAHAMS, J ;

LOUGHRAN, T ;

HIER, H .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (07) :328-330

[5] DEEP LEVELS AND A POSSIBLE D-X-LIKE CENTER IN MOLECULAR-BEAM EPITAXIAL INXAL1-XAS [J].

HONG, WP ;

DHAR, S ;

BHATTACHARYA, PK ;

CHIN, A .

JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) :271-274

[6]

KUANG JB, UNPUB APPL PHYS LETT

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[8] CHARGE INJECTION TRANSISTOR BASED ON REAL-SPACE HOT-ELECTRON TRANSFER [J].

LURYI, S ;

KASTALSKY, A ;

GOSSARD, AC ;

HENDEL, RH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :832-839

[9] HIGH-PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMTS [J].

MISHRA, UK ;

BROWN, AS ;

JELLOIAN, LM ;

HACKETT, LH ;

DELANEY, MJ .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :41-43

[10] DEEP ELECTRON TRAPPING CENTERS IN SI-DOPED INALAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

NAKASHIMA, K ;

NOJIMA, S ;

KAWAMURA, Y ;

ASAHI, H .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1987, 103 (02) :511-516

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