HIGH-PERFORMANCE INALAS/INGAAS HEMTS AND MESFETS

被引：34

作者：

FATHIMULLA, A

ABRAHAMS, J

LOUGHRAN, T

HIER, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 07期

关键词：

D O I：

10.1109/55.733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：328 / 330

页数：3

共 10 条

[1] MICROWAVE PERFORMANCE OF PULSE-DOPED-HETEROSTRUCTURE GAINAS MESFETS [J].

FATHIMULLA, A ;

HIER, H ;

ABRAHAMS, J .

ELECTRONICS LETTERS, 1988, 24 (02) :93-94

[2]

FATHIMULLA A, 1988, IEEE ELECTRON DEVICE, V9, P223

[3]

FATHIMULLA A, 1987, IEDM, P607

[4] HIGH-TRANSCONDUCTANCE ALLNAS/GAINAS HIFETS GROWN BY MOCVD [J].

KAMADA, M ;

KOBAYASHI, T ;

ISHIKAWA, H ;

MORI, Y ;

KANEKO, K ;

KOJIMA, C .

ELECTRONICS LETTERS, 1987, 23 (06) :297-298

[5] COMPOSITION DEPENDENCE OF AU INXAL1-XAS SCHOTTKY-BARRIER HEIGHTS [J].

LIN, CL ;

CHU, P ;

KELLNER, AL ;

WIEDER, HH ;

REZEK, EA .

APPLIED PHYSICS LETTERS, 1986, 49 (23) :1593-1595

[6]

MISHRA UK, 1987, DEVICE RES C SANTA B

[7]

OHNO H, 1980, I PHY C SER, V56, P465

[8] MICROWAVE PERFORMANCE OF INALAS/INGAAS/INP MODFETS [J].

PENG, CK ;

AKSUN, MI ;

KETTERSON, AA ;

MORKOC, H ;

GLEASON, KR .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) :24-26

[9]

SCHICHIJO H, 1980, SOLID STATE ELECTRON, V23, P817

[10]

SCOTT MD, 1985, INT PHYS C SER, V79, P475

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