COMPOSITION DEPENDENCE OF AU INXAL1-XAS SCHOTTKY-BARRIER HEIGHTS

被引：42

作者：

LIN, CL ^{[1
]}

CHU, P ^{[1
]}

KELLNER, AL ^{[1
]}

WIEDER, HH ^{[1
]}

REZEK, EA ^{[1
]}

机构：

[1] TRW,ELECTRO OPT RES CTR,REDONDO BEACH,CA 90278

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 23期

关键词：

D O I：

10.1063/1.97290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1593 / 1595

页数：3

共 16 条

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[2] GAAS/GA0.47IN0.53AS LATTICE-MISMATCHED SCHOTTKY-BARRIER GATES - INFLUENCE OF MISFIT DISLOCATIONS ON REVERSE LEAKAGE CURRENTS
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[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN
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BONNER, WA
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[4] SCHOTTKY-BARRIER HEIGHT OF IN0.43AL0.57AS
CHU, P
LIN, CL
WIEDER, HH
[J]. ELECTRONICS LETTERS, 1986, 22 (17) : 890 - 892
[5] REALIZATION OF N-CHANNEL AND P-CHANNEL HIGH-MOBILITY (AL,GA)AS/GAAS HETEROSTRUCTURE INSULATING GATE FETS ON A PLANAR WAFER SURFACE
CIRILLO, NC
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VOLD, PJ
ABROKWAH, JK
TUFTE, ON
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 645 - 647
[6] THE GROWTH AND CHARACTERIZATION OF NOMINALLY UNDOPED AL1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 219 - 223
[7] GA0.47IN0.53AS FIELD-EFFECT TRANSISTORS WITH A LATTICE-MISMATCHED REDUCED LEAKAGE CURRENT GAAS GATE
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CHEN, CY
CHO, AY
[J]. ELECTRONICS LETTERS, 1986, 22 (05) : 236 - 238
[8] HALLIWELL MAG, 1981, I PHYS C SER, V60, P271
[9] INTERNAL PHOTOEMISSION-STUDIES OF (GAIN)AS, (ALIN)AS SCHOTTKY DIODES AND (GAIN)AS/(ALIN)AS HETEROJUNCTION GROWN BY MOLECULAR-BEAM EPITAXY
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EASTMAN, LF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 700 - 702
[10] LORENZ MR, 1970, 10 P INT C PHYS SEM, P444

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