SCHOTTKY-BARRIER HEIGHT OF IN0.43AL0.57AS

被引:12
作者
CHU, P
LIN, CL
WIEDER, HH
机构
[1] Univ of California - San Diego, La, Jolla, CA, USA, Univ of California - San Diego, La Jolla, CA, USA
关键词
D O I
10.1049/el:19860607
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
19
引用
收藏
页码:890 / 892
页数:3
相关论文
共 19 条
  • [1] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS WITH SUB-MICRON GATES
    BARNARD, J
    OHNO, H
    WOOD, CEC
    EASTMAN, LF
    [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 174 - 176
  • [2] SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT
    BEST, JS
    [J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 522 - 527
  • [3] CHEN CY, 1982, IEEE ELECTRON DEVICE, V3, P239
  • [4] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY
    DAVIES, GJ
    HECKINGBOTTOM, R
    OHNO, H
    WOOD, CEC
    CALAWA, AR
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 290 - 292
  • [5] THE GROWTH AND CHARACTERIZATION OF NOMINALLY UNDOPED AL1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY
    DAVIES, GJ
    KERR, T
    TUPPEN, CG
    WAKEFIELD, B
    ANDREWS, DA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 219 - 223
  • [6] MURINE RESISTANCE TO INHALED NEISSERIA-MENINGITIDIS AFTER INFECTION WITH AN ENCEPHALOMYOCARDITIS VIRUS
    GOLDSTEIN, E
    BUHLES, WC
    AKERS, TG
    VEDROS, N
    [J]. INFECTION AND IMMUNITY, 1972, 6 (03) : 398 - +
  • [7] HALLIWELL MAG, 1981, I PHYS C SER, V60, P271
  • [8] INTERNAL PHOTOEMISSION-STUDIES OF (GAIN)AS, (ALIN)AS SCHOTTKY DIODES AND (GAIN)AS/(ALIN)AS HETEROJUNCTION GROWN BY MOLECULAR-BEAM EPITAXY
    HSIEH, KH
    WICKS, G
    CALAWA, AR
    EASTMAN, LF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 700 - 702
  • [9] HIGH TRANSCONDUCTANCE INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS
    KETTERSON, A
    MOLONEY, M
    MASSELINK, WT
    PENG, CK
    KLEM, J
    FISCHER, R
    KOPP, W
    MORKOC, H
    [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 628 - 630
  • [10] EFFECT OF MISMATCH STRAIN ON BAND-GAP IN III-V SEMICONDUCTORS
    KUO, CP
    VONG, SK
    COHEN, RM
    STRINGFELLOW, GB
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5428 - 5432